 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| FDFS2P753Z Integrated P-Channel PowerTrench(R) MOSFET and Schottky Diode November 2006 FDFS2P753Z -30V, -3A, 115m Features Integrated P-Channel PowerTrench(R) MOSFET and Schottky Diode General Description The FDFS2P753Z combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package. This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low on-state resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies. Max rDS(on) = 115m at VGS = -10V, ID = -3.0A Max rDS(on) = 180m at VGS = -4.5V, ID = -1.5A VF < 500mV @ 1A VF < 580mV @ 2A Schottky and MOSFET incorporated into single power surface mount SO-8 package Electrically independent Schottky and MOSFET pinout for design flexibility RoHS Compliant Application DC - DC Conversion D C C D D 5 4 3 2 1 G S A A D6 SO-8 Pin 1 S A A G C7 C8 MOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol VDS VGS ID PD EAS VRRM IO TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Single Pulse Avalanche Energy Schotty Repetitive Peak Reverse Voltage Schotty Average Forward Current Operating and Storage Junction Temperature Range (Note 1a) (Note 1a) (Note 2) (Note 1a) Ratings -30 25 -3 -16 1.6 6 -20 -2 -55 to +150 Units V V A W mJ V A C Thermal Characteristics RJA RJC Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case (Note 1a) (Note 1) 78 40 C/W Package Marking and Ordering Information Device Marking FDFS2P753Z Device FDFS2P753Z Package SO-8 Reel Size 330mm Tape Width 12mm Quantity 2500 units (c)2006 Fairchild Semiconductor Corporation FDFS2P753Z Rev.A 1 www.fairchildsemi.com FDFS2P753Z Integrated P-Channel PowerTrench(R) MOSFET and Schottky Diode Electrical Characteristics TJ = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = -250A, VGS = 0V ID = -250A, referenced to 25C VDS = -24V, VGS = 0V TJ = 125C VGS = 25V, VDS = 0V -30 -21 -1 -100 10 V mV/C A A On Characteristics VGS(th) VGS(th) TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient VGS = VDS, ID = -250A ID = -250A, referenced to 25C VGS = -10V, ID = -3.0A Drain to Source On-Resistance VGS = -4.5V, ID = -1.5A VGS = -10V, ID = -3.0A, TJ = 125C VDS = -5V, ID = -3.0A -1 -2.1 5 69 115 97 6 115 180 162 S m -3 V mV/C Forward Transconductance Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = -10V, VGS = 0V, f = 1MHz f = 1MHz 340 80 65 18 455 110 100 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg(TOT) Qg(4.5) Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge at -10V Total Gate Charge at -4.5V Gate to Source Gate Charge Gate to Drain "Miller" Charge VGS = 0V to -10V VGS = 0V to -4.5V VDD = -10V ID = -3.0A VDD = -10V, ID = -3.0A VGS = -10V, RGEN = 6 7 31 18 20 6.6 3.3 1.3 1.6 14 50 33 35 9.3 4.6 ns ns ns ns nC nC nC nC Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = -2.0A (Note 3) -0.9 20 14 -1.2 30 21 V ns nC IF = -3.0A, di/dt = 100A/s Schottky Diode Characteristics IR Reverse Leakage VF = 20V IF = 1A VF Forward Voltage IF = 2A TJ = 25C TJ = 125C TJ = 25C TJ = 125C TJ = 25C TJ = 125C 190 66 0.5 0.39 0.58 0.53 V A mA FDFS2P753Z Rev.A 2 www.fairchildsemi.com FDFS2P753Z Integrated P-Channel PowerTrench(R) MOSFET and Schottky Diode Notes: 1: RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 78C/W when mounted on a 0.5in2 pad of 2 oz copper b) 135C/W when mounted on a minimun pad 2: Starting TJ = 25oC, L = 3mH, IAS = 2A, VDD = 27V, VGS = 10V 3: Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%. FDFS2P753Z Rev.A 3 www.fairchildsemi.com FDFS2P753Z Integrated P-Channel PowerTrench(R) MOSFET and Schottky Diode Typical Characteristics TJ = 25C unless otherwise noted VGS = -10V PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 16 -ID, DRAIN CURRENT (A) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 VGS = -10V VGS = -4.5V VGS = 3.5V VGS = 4V PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 12 VGS = -5V VGS = -5V 8 VGS = -4.5V 4 VGS = -4V VGS = -3.5V 0 0 1 2 3 4 5 0 4 -VDS, DRAIN TO SOURCE VOLTAGE (V) 8 12 -ID, DRAIN CURRENT(A) 16 Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 450 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (m) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.6 1.4 1.2 1.0 0.8 0.6 -75 ID = -3A VGS = -10V 400 350 300 250 200 150 100 50 ID = -3A PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX TJ = 150oC TJ = 25oC -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 3 4 5 6 7 8 9 -VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. Normalized On-Resistance vs Junction Temperature 16 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX Figure 4. On-Resistance vs Gate to Source Voltage -IS, REVERSE DRAIN CURRENT (A) 20 10 VGS = 0V -ID, DRAIN CURRENT (A) 12 TJ = 150oC 1 TJ = 150oC 8 TJ = 25oC 0.1 TJ = 25oC 4 TJ = -55oC 0.01 TJ = -55oC 0 1 2 3 4 5 -VGS, GATE TO SOURCE VOLTAGE (V) 6 1E-3 0.2 0.4 0.6 0.8 1.0 -VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDFS2P753Z Rev.A 4 www.fairchildsemi.com FDFS2P753Z Integrated P-Channel PowerTrench(R) MOSFET and Schottky Diode Typical Characteristics TJ = 25C unless otherwise noted -VGS, GATE TO SOURCE VOLTAGE(V) 10 8 6 4 2 0 VDD = -5V 800 CAPACITANCE (pF) Ciss VDD = -10V 100 f = 1MHz VGS = 0V Coss VDD = -15V Crss 0 2 4 6 -Qg, GATE CHARGE(nC) 8 20 0.1 1 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 3.5 -ID, DRAIN CURRENT (A) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 25 RJA = 78 C/W o 4 -IAS, AVALANCHE CURRENT(A) 3 VGS = -10V TJ = 25oC 2 TJ = 125oC VGS = -4.5V 1 0.01 0.1 tAV, TIME IN AVALANCHE(ms) 1 50 75 100 125 o 150 TA, AMBIENT TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability P(PK), PEAK TRANSIENT POWER (W) Figure 10. Maximum Continuous Drain Current vs Case Temperature 200 30 -ID, DRAIN CURRENT (A) 10 100us 100 VGS = -10V FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 150 - T A ----------------------125 TA = 25oC 1 1ms 10ms 10 0.1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 0.01 0.1 SINGLE PULSE TJ = MAX RATED TA = 25OC 100ms 1s 10s DC 1 0.6 -4 10 SINGLE PULSE -3 -2 -1 0 1 2 3 1 10 80 10 -VDS, DRAIN to SOURCE VOLTAGE (V) 10 10 10 10 t, PULSE WIDTH (s) 10 10 Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation FDFS2P753Z Rev.A 5 www.fairchildsemi.com FDFS2P753Z Integrated P-Channel PowerTrench(R) MOSFET and Schottky Diode Typical Characteristics TJ = 25C unless otherwise noted 10 IR, REVERSE LEAKAGE CURRENT (mA) IF, REVERSE LEAKAGE CURRENT (A) 30 10 TJ = 125oC 1 1 TJ = 125oC 0.1 0.1 0.01 TJ = 25oC 0.01 TJ = 25oC 1E-3 0.0 0.4 0.8 1.2 1.6 2.0 1E-3 0 5 10 15 20 VF, REVERSE VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 13. Schottky Diode Forward Voltage 2 Figure 14. Schottky Diode Reverse Current 1 NORMALIZED THERMAL IMPEDANCE, ZJA DUTY CYCLE-DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA 0.01 0.005 -4 10 SINGLE PULSE 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 t, RECTANGULAR PULSE DURATION (s) Figure 15. Transient Thermal Response Curve FDFS2P753Z Rev.A 6 www.fairchildsemi.com FAIRCHILD SEMICONDUCTOR TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACT(R) FAST(R) FASTrTM FPSTM FRFETTM FACT Quiet SeriesTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyBoostTM TinyBuckTM TinyPWMTM TinyPowerTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHC(R) UniFETTM UltraFET(R) VCXTM WireTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production Rev. I21 |
Price & Availability of FDFS2P753Z
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |